Semiconductor device

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H - Electricity

01

L

345/26

H01L 31/02 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2031734

Abstract Disclosed herein is a semiconductor device comprising a region in which carriers are transferred in the lamination direction of a multiple quantum well. A multiple quantum well multiplication layer according to the present invention can be found in a superlattice APD device, wherein a superlattice structure with a varying well width is introduced to a hetero- interface present in the transfer region, thereby preventing a pile-up of the carriers.

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