Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/71, 356/80

H01L 29/40 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1097430

ABSTRACT: A power transistor in which the emitter digits become smaller from the edge of the transistor towards the centre. This configuration provides a more uniform temperature distribution than with emitter digits of the same lengths. The transistor can be operated in a comparatively large operating range without series resistors in the base or emitter track which are usually necessary for safeguarding against second breakdown. -21-

303661

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