Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/162

H01L 29/70 (2006.01) H01L 29/06 (2006.01) H01L 29/732 (2006.01) H01L 29/74 (2006.01) H01L 29/747 (2006.01) H01L 29/78 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1131801

1 PHN 9018 ABSTRACT: A semiconductor device having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first p-n junction having a comparatively high breakdown voltage, and laterally by a second p-n junction having a comparat- ively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs.

319526

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-259352