H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/79
H01L 29/70 (2006.01) H01L 27/00 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/146 (2006.01)
Patent
CA 1043468
ABSTRACT OF THE DISCLOSURE Disclosed is a semiconductor device which is similar in construction to a lateral bipolar transistor and performs functions similar to those of the latter. A first embodiment of the semiconductor device has a construction which includes a first semiconductor region serving as a base region; second and third semiconductor regions respectively formed as by diffusion in the first semi- conductor region from the side of the major surface thereof to serve as emitter and collector regions, respectively; a fourth semiconductor region of low resistivity and of the same conductivity type as the first semiconductor region and formed as by diffusion in the first semiconductor region from the side of the major surface thereof to extend between the second and third semiconductor regions; first, second and third electrodes respectively deposited on the second, third and fourth semi- conductor regions to serve as emitter, collector and gate electrodes, respectively; and a fourth electrode electrically connected with the first semiconductor region to serve as a base electrode. A second embodiment of the semiconductor device has a construction in which the second electrode of the abovesaid first embodiment of the semiconductor device is omitted but a sixth semiconductor region of the same conductivity type as the first semiconductor region is formed in the third semi- conductor region and a fifth electrode is deposited on the sixth semiconductor region to serve as a hooked collector electrode. - 2 - A third embodiment of the semiconductor device has a construction in which the first electrode of the abovesaid first or second embodiment of the semiconductor device is omitted and which is adapted to store a light signal in the PN junction between the first and second semiconductor regions. Further, semiconductor apparatus is disclosed which has a construction that a plurality of semiconductor devices of the abovesaid third embodiment are formed on a common semi- conductor substrate to provide a photoelectric conversion unit of image pickup apparatus.
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