Semiconductor device

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H01L 29/78 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01) H01L 29/732 (2006.01) H01L 29/74 (2006.01) H01L 29/747 (2006.01) H01L 29/80 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1134055

28-2-1979 l PHN 9188 ABSTRACT. "Semiconductor device". A semiconductor device having a field effect transistor of the lateral or vertical type with an island- shaped region which comprises a contact region and is bounded at the bottom by a first p-n junction having a comparatively high breakdown voltage and laterally by a second p-n junction having a comparatively low breakdown voltage. The doping and thickness of the island-shaped region are so small that the region situated between the second p-n junction and the contact region is fully depleted before breakdown at the second p-n junction occurs.

332190

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