Semiconductor device and a manufacturing method therefor

Details Semiconductor device and a manufacturing method therefor Semiconductor device and a manufacturing method therefor

H - Electricity

01

L

H01L 21/76 (2006.01) B01J 19/12 (2006.01) H01L 21/02 (2006.01) H01L 21/314 (2006.01) H01L 27/108 (2006.01)

Patent

CA 2115944

ABSTRACT OF THE DISCLOSURE A method for manufacturing a semiconductor device having a nitride layer includes an ozone treatment process of the nitride layer to obtain a nitride layer of high film quality at a lower temperature, thereby forming a capacitor without requiring an oxidation process for forming an oxide layer as in a common nitride/oxide structure. After performing the ozone treatment process, the ordinary oxide layer formation process is executed to significantly decrease leakage current and increase breakdown voltage, thereby reducing the limitation in thinning down a dielectric film of the nitride/oxide structure.

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