Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

H - Electricity

01

L

H01L 21/28 (2006.01) H01G 4/10 (2006.01) H01L 21/77 (2006.01) H01L 25/07 (2006.01) H01L 27/01 (2006.01) H01L 27/06 (2006.01)

Patent

CA 2252875

In order to form a first capacitor having a small capacitance and a second capacitor having a large capacitance on a substance with a minimum number of manufacturing steps, at least one of electrodes of the first capacitor and at least one of electrodes of the second capacitor are formed simultaneously.

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