Semiconductor device and fabrication method therof

Details Semiconductor device and fabrication method therof Semiconductor device and fabrication method therof

H - Electricity

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H01L 21/04 (2006.01) H01L 21/306 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01) H01L 21/336 (2006.01) H01L 21/8234 (2006.01) H01L 21/8239 (2006.01) H01L 27/105 (2006.01) H01L 27/12 (2006.01)

Patent

CA 2433565

In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.

La présente invention concerne un procédé de fabrication d'un dispositif à semi-conducteurs incluant un transistor et des condensateurs formés au-dessus d'un substrat de silicium. En l'occurrence, pour dégager l'hydrogène présent sur une partie au moins de la surface du substrat de silicium, on expose la surface à un plasma produit à partir d'un premier gaz inerte, puis à un plasma produit à partir d'un mélange de gaz fait d'un deuxième gaz inerte et d'au moins une sorte de molécules de gaz. On aboutit ainsi à la formation sur la surface du substrat de silicium d'une couche composée de silicium contenant au moins une partie des éléments constituant les molécules de gaz.

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