Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

H - Electricity

01

L

H01L 29/00 (2006.01) H01L 21/311 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2199346

A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.

Dispositif semiconducteur, dans lequel les couches de câblage sont isolées électriquement les unes des autres par une pellicule isolante à base de fluorure de carbone, le carbone et le fluor étant les principaux constituants de cette pellicule; les couches de câblage sont connectées électriquement les unes aux autres par une matière conductrice insérée dans un trou à travers la pellicule isolante; ledit dispositif est obtenu par décapage sélectif de la pellicule de fluorure de carbone amorphe. De plus, une pellicule d'oxyde de silicium, de nitrure de silicium ou d'oxynitrure de silicium est formée à la fois sur la pellicule de flurorure de carbone amorphe et sur une surface latérale du trou, ou alors sur l'une ou l'autre de la pellicule de flurorure de carbone amorphe ou de la surface latérale.

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