Semiconductor device and method

Details Semiconductor device and method Semiconductor device and method

H - Electricity

01

L

H01L 29/205 (2006.01) H01L 29/737 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2536329

Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signals with the emitter (150), base (140), and collector (130) regions; and adapting the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140).

L'invention concerne des procédés et des dispositifs qui permettent de produire une émission contrôlable de lumière à partir d'un transistor bipolaire. L'invention concerne également un procédé qui permet d'augmenter la vitesse d'un transistor bipolaire. Ce procédé, qui utilise un transistor bipolaire pourvu de zones d'émission, de base et de collecte et des électrodes permettant de coupler des signaux électriques avec les zones d'émission, de base et de collecte, permet d'adapter la zone de base afin d'améliorer l'émission stimulée au détriment d'une émission spontanée, de façon à diminuer la durée de vie de la recombinaison de porteurs dans la zone de base.

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