Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

H - Electricity

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H01L 21/60 (2006.01) H01L 21/3205 (2006.01) H01L 21/56 (2006.01) H01L 21/768 (2006.01) H01L 23/31 (2006.01) H01L 23/485 (2006.01)

Patent

CA 2301083

A semiconductor device provided with: a semiconductor element forming an integrated circuit; a plurality of electrode pads formed on the integrating circuit forming surface side of the semiconductor element; bump electrodes for external units electrically connected to the electrode pads through conductive layers; and a stress relieving layer which is formed between the integrated circuit forming surface and electrode pads and between the bump electrodes and the conductive layers, is bonded to the surface, pads, electrodes, and layers, is cut off by at least l/3 from its surface, and is divided into a plurality of areas. The semiconductor device is highly reliable, and can be mounted at a high packing density and at a low cost.

L'invention concerne un dispositif semi-conducteur qui comprend ce qui suit: un élément semi-conducteur formant un circuit intégré; plusieurs plages d'électrodes créées du côté de la surface formant le circuit intégré de l'élément semi-conducteur; des électrodes en bosse destinées aux unités externes connectées électriquement aux plages d'électrodes à travers des couches conductrices; et une couche de soulagement de contrainte qui est créée entre la surface formant le circuit intégré et les plages d'électrodes et entre les électrodes en bosse et les couches conductrices. Cette couche est soudée à la surface, aux plages, aux électrodes et aux couches puis coupée sur au moins un tiers de sa surface et divisée en plusieurs zones. Le dispositif semi-conducteur est extrêmement fiable et peut être monté avec une densité d'encapsulation élevée et à peu de frais.

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