H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/123
H01L 21/82 (2006.01) G11C 11/34 (2006.01) G11C 11/412 (2006.01) H01L 21/02 (2006.01) H01L 21/225 (2006.01) H01L 21/3215 (2006.01) H01L 21/768 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01) H01L 23/64 (2006.01) H01L 27/06 (2006.01) H01L 27/11 (2006.01)
Patent
CA 1150416
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF ABSTRACT A plural layered wiring which comprises a plurality of polycrystal semiconductor layers can be improved in its magnitude of circuit integration, when one or more upper polycrystal semiconductor layers which is or are doped to the moderate impurity concentration is or are utilized as resistor elements, the lowest polycrystal semiconductor lay- er which is highly doped is utilized as electrodes and/or wirings for active elements, and the both polycrystal layers are connected with each other by regions which are highly doped by upward diffusion of impurities contained in the highly doped regions of a substrate, because this arrangement/ configuration entirely lifts restriction imposed for location of resistor elements arranged in the upper layers. This arrangement/configuration is realized by a specific sequential combination of steps which includes a step of upward diffusion of impurities from the highly doped regions of a substrate. An additional minor advantage originated from this method is exclusion of a so-called non butting process.
367608
Fetherstonhaugh & Co.
Shirai Kazunari
LandOfFree
Semiconductor device and method for production thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for production thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for production thereof will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-515152