Semiconductor device and method of making it

Details Semiconductor device and method of making it Semiconductor device and method of making it

H - Electricity

01

L

H01L 21/308 (2006.01) H01L 21/18 (2006.01) H01L 21/28 (2006.01) H01L 23/482 (2006.01) H01L 29/04 (2006.01)

Patent

CA 2057123

A semiconductor device is made by etching, using a mask having an opening defined by edges including at least one [011] oriented edge, a (100) plane major surface of a III-V compound semiconductor layer so that the surface revealed by this etching step has the (111) orientation. An electrode is disposed to overpass the etched (111) surface by vacuum vapor deposition of an electrode metal.

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