Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

H - Electricity

01

L

345/1, 356/197

H01L 31/02 (2006.01) H01L 21/339 (2006.01) H01L 21/8234 (2006.01)

Patent

CA 1194193

17 ABSTRACT: A semiconductor device comprising a semiconduc- tor body having a surface provided with a first insulating layer. On this layer is disposed a pattern of conductor strips coated with insulation strips with projecting edges. Under the edges, the conductor strips are coated with insulating tracks which fill the spaces under the edges and which at least at the area where they adjoin the first insulating layer can be etched selectively with respect to this layer. As a material for the conductor strips use may be made of material other than polycrystalline silicon, such as tungsten, molybdenum and silicides. The thickness of the first insulating layer is affected to a very small extent during the manufacture of the device, while its depth remains unchanged.

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