Semiconductor device and method of manufacturing the same

H - Electricity – 01 – L

Patent

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Details

H01L 23/538 (2006.01) H01L 21/60 (2006.01) H01L 23/31 (2006.01) H01L 25/10 (2006.01)

Patent

CA 2464078

A semiconductor device includes a semiconductor construction assembly (23) having a semiconductor substrate (24) which has first and second surfaces, and has an integrated circuit element formed on the first surface, a plurality of connection pads (25) which are connected to the integrated circuit element, a protective layer (27) which covers the semiconductor substrate and has openings (28) for exposing the connection pads (25), and conductors (31) which are connected to the connection pads (25), arranged on the protective layer (27), and have pads. An upper insulating layer (37) covers the entire upper surface of the semiconductor construction assembly (23) including the conductors (31) except the pads. A sealing member (34 or 36) covers at least one side surface of the semiconductor construction assembly (23). An upper conductors (43) is formed on the upper insulating layer, and has one ends electrically connected to the pads and an external connection pads, respectively, an external connection pad of at least one of the upper conductors being disposed in a region corresponding to the sealing member.

L'invention porte sur un dispositif à semi-conducteurs comprenant un ensemble de construction à semi-conducteurs (23) possédant un substrat à semi-conducteurs (24) pourvu de première et seconde surfaces, un élément de circuit intégré étant formé sur la première surface, une pluralité de plages de connexion (25) qui sont raccordées à l'élément de circuit intégré, une couche de protection (27) qui recouvre le substrat à semi-conducteurs et possède des orifices (28) de façon à exposer les plages de connexion (25), et des conducteurs (31) qui sont raccordés aux plages de connexion (25), disposées sur la couche de protection (27), et qui comportent des plots. Une couche isolante supérieure (37) recouvre la totalité de la surface supérieure de l'ensemble de construction à semi-conducteurs (23) comprenant les conducteurs (31), à l'exception des plages de connexion. Un élément de scellement (34 ou 36) recouvre au moins une surface latérale de l'ensemble de construction à semi-conducteurs (23). Un conducteur supérieur (43) est formé sur la couche isolante supérieure et possède une extrémité raccordée électriquement aux plots et aux plages de connexion externes, une plage de connexion externe d'au moins un des conducteurs étant placée dans une région correspondant à l'élément de scellement.

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