Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

G - Physics

01

P

G01P 15/125 (2006.01) G01P 15/08 (2006.01) H01L 29/84 (2006.01)

Patent

CA 2103174

- 1 - TITLE OF THE INVENTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME ABSTRACT OF THE INVENTION A semiconductor device such as a semiconductor acceleration sensor of an electrostatic capacity type and a method of manufactur- ing the same are disclosed, wherein a silicon layer is bonded to first and second glass layers by means of an anodic bonding process in such a manner as to be positioned between the first and second glass layers. The first glass layer has an overhung portion pro- truded from an edge of the second glass layer. At least an inter- connection is formed between the silicon layer and the first glass layer and has a bonding pad positioned on the inner surface of the overhung portion of the first glass layer. Before the anodic bond- ing process, an anodic-bonding-inhibition layer such as aluminum layer is positioned between a second glass wafer forming the second glass layer and a silicon wafer forming the silicon layer, and faces to a predetermined portion of a first glass wafer forming the first glass layer. The predetermined portion of the first glass wafer is to be the overhung portion of the first glass layer. During a dicing process after the anodic bonding process, the second glass wafer is cut along the configuration of the anodic-bonding-inhibition-layer, thereby removing an unnecessary portion of the second glass wafer facing to the overhung portion of the first glass layer from the remaining portions of the second glass wafer.

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