Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

H - Electricity

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H01L 29/04 (2006.01) H01L 21/302 (2006.01) H01L 21/306 (2006.01) H01L 21/31 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01) H01L 21/335 (2006.01) H01L 29/772 (2006.01) H01L 21/336 (2006.01)

Patent

CA 2451887

In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface R a is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

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