Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

H - Electricity

01

L

356/149

H01L 21/265 (2006.01) H01L 27/06 (2006.01) H01L 29/08 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1226375

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME ABSTRACT OF THE DISCLOSURE A semiconductor device including an FET utilizing two-dimensional electron gas (2DEG), comprising a substrate, a first semiconductor layer (an undoped GaAs layer) formed on the substrate by an MBE method, a second semiconductor layer (an n-type AlGaAs layer) formed on the first layer by an MBE method, a source electrode and a drain electrode formed on the second layer and having alloyed regions, and a gate electrode formed on the second layer. To decrease the contact resistance between the alloyed regions and the 2DEG layer in the first layer, impurity doped regions are formed in the first layer under the source electrode and the drain electrode by an ion-implantation method, prior to the formation of the second layer. Further, an internal conductive line or resistor can be formed by doping impurities into the first layer by an ion-implantation method prior to the formation of the second layer.

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