Semiconductor device and process for producing the same

Details Semiconductor device and process for producing the same Semiconductor device and process for producing the same

H - Electricity

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H01L 27/00 (2006.01) G11C 11/412 (2006.01) H01L 21/02 (2006.01) H01L 27/06 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1109165

- 37 - SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME ABSTRACT OF THE DISCLOSURE A polycrystalline silicon is used for a resistor element of a semiconductor device instead of a conventional, diffused resistor or a channel resistor, in which the channel resistance of an MOS transistor is utilized as the resistor. The length of a polycrystalline silicon layer for the resistor element is predetermined by the other polycrystalline silicon layer, formed above the resistor element. The structure of the semiconductor device according to the present invention is suited for a high density integrated circuit.

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