H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/161
H01L 21/76 (2006.01) H01L 21/10 (2006.01) H01L 21/205 (2006.01) H01L 21/335 (2006.01) H01L 29/10 (2006.01) H01L 29/45 (2006.01) H01L 29/47 (2006.01) H01L 29/772 (2006.01) H01L 29/778 (2006.01)
Patent
CA 1278884
Abstract of the Disclosure A semiconductor device implemented on a substrate which includes a first layer of semiconductor material of a first conductivity type composed of a semiconductor material and forming a first active region of said device; and a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on the first layer and forming a second active region of the device. A third layer of semiconductor material is provided composed of a relatively narrow energy bandgap material disposed on the second layer and having an energy band step such that carriers are confined in that layer. A fourth layer of semiconductor material of a first conductivity type is further provided composed of a relatively wide energy bandgap material disposed on the third layer and forming a third active region of the device. The resulting structure provides a new type of transistor action that combines the properties of both bipolar and field effect transistors is a three terminal electronic device.
580502
Grinberg Anatoly
Kastalsky Alexander
Bell Communications Research Inc.
Cassan Maclean
Grinberg Anatoly
Kastalsky Alexander
LandOfFree
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