Semiconductor device by diffusion of zinc or cadmium

Details Semiconductor device by diffusion of zinc or cadmium Semiconductor device by diffusion of zinc or cadmium

H - Electricity

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356/178

H01L 21/22 (2006.01) H01L 21/223 (2006.01) H01L 29/36 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1134062

PHN 9294 ABSTRACT A method of manufacturing a semiconductor device comprising a body which consists of semiconductor material of the III-V compound type and which is formed by an n-type substrate and a subsrtate-adjoining region having conductivity properties differing from the substrate. Zinc or cadium is introduced at least over a part of the surface of the region into the region and is diffused to the substrate. The net donor concentration in the substrate near the junction between the region and the substrate is chosen to be so high that the diffusion of zinc or cadium in the substrate near the junction between the region and the substrate is retarded.

340410

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