H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/108 (2006.01) H01L 21/8242 (2006.01)
Patent
CA 2119547
Abstract of the Invention A capacitor of a semiconductor device and a method for manufacturing the same, wherein first and second material whose etching rates are different with respect to an isotropic etching process, are used for forming first and second material layers. The first and second material layers formed on a source region are partially etched to form a contact hole partially exposing the source region. The side portion of the first material layer exposed by the contact hole is partially and isotropically etched by the isotropic etching to form a convex space portion. A conductive layer is formed and then patterned so as to form a storage electrode. Then, the remaining first and second material layers are removed, to expose the storage electrode. A vase-shaped storage electrode formed of a single conductive layer and constituted by a lower portion connected to the source region and a body elongated upwards from the lower portion having a middle portion with at least one convex portion for increasing a capacitance, is obtained. A dielectric film is formed on inner and outer surfaces of the storage electrode and a plate electrode is formed on the dielectric film. The storage electrode is formed of only one conductive layer and the upper, side and bottom surfaces of the storage electrode can be utilized as an effective area of the capacitor. Cell capacitance can be easily increased and a reliable capacitor can be obtained.
Choi Yong-Jin
Lee Tae-Woo
Oh Yong-Chul
Ridout & Maybee Llp
Samsung Electronics Co. Ltd.
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