Semiconductor device comprising a field effect transistor

Details Semiconductor device comprising a field effect transistor Semiconductor device comprising a field effect transistor

H - Electricity

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356/149

H01L 29/78 (2006.01) H01L 23/485 (2006.01) H01L 27/02 (2006.01)

Patent

CA 1186419

11 ABSTRACT: A semiconductor device comprising a semiconductor body includes a field effect transistor and an active tran- sistor region with two electrode zones one of which surrounds the other, and an island zone which is situated therebetween. These zones enclose channel regions over which there are provided gate electrodes, the first one of which surrounds the second one. The gate electrodes are connected to bond pads present outside the active transis- tor region. The first gate electrode is interrupted at the area of the connection from the second gate electrode to a bond pad, both its ends being connected to another bond pad. Even at very high frequencies, the transistor exhibits a high gain, a high transconductance and a low input attenuation.

412045

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