Semiconductor device comprising a layer of tungsten between...

Details Semiconductor device comprising a layer of tungsten between... Semiconductor device comprising a layer of tungsten between...

H - Electricity

01

L

356/151

H01L 23/52 (2006.01) H01L 21/768 (2006.01) H01L 23/522 (2006.01)

Patent

CA 1215477

16 ABSTRACT: The semiconductor device comprises a semiconductor body having a surface which is covered by a first insulat- ing layer on which a first conductive track is disposed, which is covered by a second insulating layer, which extends also over the first insulating layer and on which a second conductive track is disposed, the second insulat- ing layer being provided with a window, through which the second conductive track contacts the first conductive track. A layer of tungsten is present under the second conductive track. According to the invention, the tung- sten is present only at the area of the first conductive track within the window in the second insulating layer. During operation of the device, substantially no short- circuits occur between initially mutually insulated con- ductive tracks.

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