Semiconductor device comprising at least one schottky- type...

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H01L 29/872 (2006.01) H01L 21/285 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1206623

ABSTRACT: A semiconductor device comprising at least one Schottky- type rectifier having controllable barrier height and method for manufacturing such devices. A semiconductor device comprises a Schottky- type diode which has a ccnductor-to-semiconductor barrier height .PHI.B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The si- licide layer is typically platinum silicide whose thick- ness is on the order of 100 angstroms. In fabricating one version of the diode, a metallic layer (70) consist- ing of two or more metals such as platinum and nickel is deposited on an N-type silicon semiconductor (68) and heated to create a metal silicide layer (72) consisting of a lower layer (62) and an upper layer (74) of different average composition. A portion of the upper layer is then removed, allowing .PHI.B to be adjusted suitably. In particu- lar the device contains a pair of Schottky-type diodes of different conductor-to-semiconductor barrier height .PHI.B. For at least one of the diodes, .PHI.B is controlled by adjusting the thickness of a metal silicide layer (78A, 78B or 78C) which forms a rectifying junction (76A, 76B or 76C) with an N-type semiconductor (170). Fig. 2a, b.

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