Semiconductor device comprising insulated gate field effect...

Details Semiconductor device comprising insulated gate field effect... Semiconductor device comprising insulated gate field effect...

H - Electricity

01

L

356/126

H01L 29/78 (2006.01) H01L 27/02 (2006.01) H03K 19/0944 (2006.01)

Patent

CA 1232977

PHN 10.990 32 ABSTRACT: A semiconductor device comprising insulated gate field effect transistors, with which logic gate circuits having a satisfactory switching speed and a high packing density can be realized. The logic gate circuits are composed of transistor structures having a common source zone (22), which each comprise a gate (33), a second semi- conductor zone (25) and one or more drain zones (28) and are manufactured in DMOS technology. The gates (33) are strip-shaped or have at least a strip-shaped part. The gate circuits can be integrated in a simple manner with one or more high-voltage transistors manufactured in DMOS technology.

478501

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