Semiconductor device contacts to narrow and closely spaced...

Details Semiconductor device contacts to narrow and closely spaced... Semiconductor device contacts to narrow and closely spaced...

H - Electricity

01

L

356/171

H01L 21/28 (2006.01) H01L 21/339 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1230430

14 ABSTRACT: A method of manufacturing a semiconductor device having narrow coplanar silicon electrodes which are separated from each other by grooves or slots having a width in the submicron range. The electrodes are alter- nately covered by oxide and by an oxidation-preventing layer, for example silicon nitride. According to the in- vention, a first and a second electrode, which are covered with the same layer and which enclose a third electrode covered by the other layer are first interconnected inside a connection region. Two of the three electrodes are separated from the connection region by etching. By selective etching, overlapping contact windows are pro- vided on all three electrodes.

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