Semiconductor device electrode and contact structure

Details Semiconductor device electrode and contact structure Semiconductor device electrode and contact structure

H - Electricity

01

L

356/151

H01L 29/30 (2006.01) H01L 21/339 (2006.01) H01L 21/60 (2006.01) H01L 21/768 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1243132

12 ABSTRACT: A semiconductor device comprising a number of par- allel first electrodes (1) which are located on an insulat- ing layer and are mutually separated by grooves with insul- ated walls, in which second electrodes (2) coplanar with the first electrodes (1) are provided. According to the invention, the first electrodes (1) are covered by an insulating layer provided with first contact windows (7), which each overlap at least one second electrode (2). The second electrodes (2) are provided with self-aligned second contact windows (8). Each second electrode (2) exhibits between its second contact window (8) and the first contact windows (7) overlapping the second electrode and also be- tween the first contact windows (7), at least one inter- ruption.

508665

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