Semiconductor device exhibiting negative transconductance

Details Semiconductor device exhibiting negative transconductance Semiconductor device exhibiting negative transconductance

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H01L 29/76 (2006.01) H01L 29/10 (2006.01) H01L 29/15 (2006.01) H01L 29/205 (2006.01) H01L 29/772 (2006.01) H01L 29/775 (2006.01)

Patent

CA 1242287

- 10 - A SEMICONDUCTOR DEVICE EXHIBITING NEGATIVE TRANSCONDUCTANCE Abstract This invention relates to semiconductor devices based on resonant tunneling which exhibit negative transconductance. A device having a one- dimensional quantum well comprises a semiconductor region capable of exhibiting one-dimensional quantization. The device comprises source and drain contact regions adjoining such semiconductor region as well as a gate contact for applying a field to such region; the device can be implemented, e.g., by methods of III-V deposition and etching technology. Under suitable source-drain bias conditions the device functions as a transistor having negative transconductance.

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