Semiconductor device fabrication

Details Semiconductor device fabrication Semiconductor device fabrication

H - Electricity

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H01L 21/22 (2006.01) H01L 21/265 (2006.01) H01L 21/308 (2006.01) H01L 21/331 (2006.01) H01L 21/336 (2006.01) H01L 29/423 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2220643

A method of forming a doped trench as part of the fabrication of a semiconductor device such as a trench gated power device, logic transistor or memory cell. A trench (3) is formed in a semiconductor substrate (1) using a mask (2). The trench is partially filled with electrode material (5) and the side walls of the trench are doped with the mask (2) still in place.

Procédé de fabrication d'une tranchée dopée faisant partie d'un dispositif à semi-conducteur tel qu'un dispositif de puissance commandée par une porte constituée par une tranchée, un transistor logique ou un élément mémoire. On constitue une tranchée (3) dans un substrat semi-conducteur (1) à l'aide d'un masque (2). La tranchée est partiellement remplie de matériau électrode (5) et ses parois latérales sont dopées avec le masque (2) laissé en place.

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