H - Electricity – 01 – J
Patent
H - Electricity
01
J
H01J 1/30 (2006.01) H01J 1/34 (2006.01) H01J 3/02 (2006.01) H01J 37/073 (2006.01) H01L 31/0304 (2006.01) H01L 31/11 (2006.01) H01S 4/00 (2006.01) H05H 1/46 (2006.01)
Patent
CA 2067843
A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs1-x P x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs1-x P x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon.R, of not less than 2.0 x 10-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs1-x P x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.
Horinaka Hiromichi
Kato Toshihiro
Nakanishi Tsutomu
Saka Takashi
Borden Ladner Gervais Llp
Daido Tokushuko Kabushiki Kaisha
Horinaka Hiromichi
Kato Toshihiro
Nakanishi Tsutomu
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