Semiconductor device for generating an electron beam

Details Semiconductor device for generating an electron beam Semiconductor device for generating an electron beam

H - Electricity

01

J

356/119

H01J 1/30 (2006.01) H01J 1/308 (2006.01) H01J 29/04 (2006.01)

Patent

CA 1253260

9 ABSTRACT: Semiconductor device for generating an electron current. A semiconductor cathode is realized with the aid of a pin structure in which the intrinsic semiconductor region (5, 6) comprises a first region (6) with a small. band distance and a second region (5) with a large band distance. Consequently, at a sufficient reverse voltage electrons (13) are generated in the first region (6) which electrons tunnel from the valence band to the conduction band and have a sufficient potential energy to be emitted from the semiconductor body (1).

531875

Affiliated with

Also associated with

Rating

Semiconductor device for generating an electron beam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device for generating an electron beam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device for generating an electron beam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1189985