H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/08 (2006.01) H01L 27/085 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H03F 3/193 (2006.01) H03F 3/195 (2006.01)
Patent
CA 2058672
A semiconductor device comprises a plurality of gate electrodes, drain electrodes, and source electrodes axi-symmetrically formed on opposite sides of a gate pad and drain pad. Two source pads are arranged at ends of these electrodes, to which the source electrodes are connected, so that a gate width can be shortened. Therefore, an output power, gain, etc., can be increased, and the high-frequency characteristics can be improved. Further, when arranging a plurality of semiconductor devices in parallel, the semiconductor chip can be formed in the shape of a square, i.e., the aspect ratio thereof can be reduced, and therefore, cracks in the semiconductor chip (semiconductor device) can be avoided.
Aoki Yoshio
Kojima Masakazu
Sano Seigo
Fujitsu Limited
Fujitsu Yamanashi Electronics Limited
Mcfadden Fincham
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