Semiconductor device for producing an electron beam

Details Semiconductor device for producing an electron beam Semiconductor device for producing an electron beam

H - Electricity

01

J

313/35.35

H01J 1/30 (2006.01) H01J 1/308 (2006.01) H01J 29/04 (2006.01) H01J 37/073 (2006.01)

Patent

CA 1234411

ABSTRACT: Semiconductor device for producing an electron beam. In a semiconductor cathode, the electron-emitting part of a pn junction (5) is provided in the tip of a projecting portion (10) of the semiconductor surface (2) which is situated within an opening 8 in an insulating layer (7) on which an acceleration electrode (9) is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material (14) reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favourable for applications in electron microscopy and electron lithography.

473433

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