Semiconductor device having a dual emitter transistor with...

Details Semiconductor device having a dual emitter transistor with... Semiconductor device having a dual emitter transistor with...

G - Physics

11

C

356/30, 352/82.1

G11C 11/40 (2006.01) G11C 11/411 (2006.01) H01L 21/762 (2006.01) H01L 27/04 (2006.01) H01L 27/07 (2006.01)

Patent

CA 1132259

ABSTRACT: An integrated circuit element having dielec- tric insulation which is provided with a transistor and a resistor in series with the base. An emitter of the transistor which with respect to the contact of the base is situated on the same side as a continuation of the latter which forms the resistor is provided with two separate surface zones adjoining oppositely located insulating side walls. In combination with another sub- stantially identical element the element is destined for the manufacture of memory cells.

318355

Affiliated with

Also associated with

Rating

Semiconductor device having a dual emitter transistor with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a dual emitter transistor with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a dual emitter transistor with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1026554