H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/123, 352/82.
H01L 27/10 (2006.01) G11C 11/404 (2006.01) H01L 21/30 (2006.01) H01L 23/556 (2006.01) H01L 27/108 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01)
Patent
CA 1153829
ABSTRACT OF THE DISCLOSURE This invention provides a semiconductor memory device in which soft errors due to alpha particles are prevented. The device comprises a semiconductor substrate of one conductivity type; dynamic memory cells formed on the semiconductor substrate, each dynamic memory cell comprising one MOS transistor and one capacitor, the MOS transistor comprising a source diffusion region and a drain diffusion region, and the capacitor operatively forming a charge storage region. The device further includes a surface layer formed on the surface of the semiconductor substrate which has a conduction type opposite to the conduction type of the semiconductor substrate so that a potential barrier is formed between the semiconductor substrate and the surface layer. With the potential barrier, electrons derived from eleetron-hole pairs produced in the substrate by alpha particles are interrupted from entering into the charge storage region so that a soft error can be prevented.
350783
Fujitsu Limited
Mcfadden Fincham
LandOfFree
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