Semiconductor device having a metal-insulator-metal capacitor

H - Electricity – 01 – L

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H01L 27/01 (2006.01) H01G 4/08 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2239124

A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.

L'invention est une méthode de fabrication de dispositifs à semi-conducteur comportant un condensateur du type métal-isolant-métal (MIM). La méthode de l'invention comprend les opérations suivantes: formation d'un premier film diélectrique sur un substrat, formation d'un condensateur MIM sur ce premier film diélectrique, formation d'un deuxième film diélectrique recouvrant ce condensateur MIM, suppression sélective du premier et du deuxième film diélectrique pour exposer le substrat, traitement de la surface du substrat au moyen d'une solution d'acide chlorhydrique, formation d'un troisième film diélectrique sur le deuxième film diélectrique et sur le substrat, et formation d'un transistor sur ce troisième film diélectrique. Le deuxième film diélectrique protège le film isolant du condensateur MIM.

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