Semiconductor device having a mos-capacitor

Details Semiconductor device having a mos-capacitor Semiconductor device having a mos-capacitor

H - Electricity

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H01L 27/04 (2006.01) H01L 21/761 (2006.01) H01L 27/08 (2006.01) H01L 29/94 (2006.01) H03B 5/36 (2006.01) H03J 3/18 (2006.01)

Patent

CA 1128670

ABSTRACT: A semiconductor element having a MOS-capacitor between a zone provided in an epitaxial layer on a substrate and a conductive layer on an insulating layer above the zone. The stray capacitance between the said zone and the sub- strate of the opposite conductivity type is considerably reduced in that said zone in the semiconductor body is sur- rounded by a further zone of the opposite conductivity type. The further zone may be applied to a fixed potential via a connection electrode.

308685

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