H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/127
H01L 29/70 (2006.01) H01L 21/8234 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01)
Patent
CA 1180468
ABSTRACT: Semiconductor device having a safety device comprising an improved lateral bipolar transistor struc- ture. The improvement is obtained by incorporating an auxiliary field effect translator which has the emitter as source zone and the collector as drain zone and in which the threshold voltage of the auxiliary field effect transistor is lower than the avalanche breakdown voltage of the collector-base junction of the lateral transistor. As a result of this the lateral transistor switches sooner, at a lower voltage, to the readily conductive on- state.
394612
de Graaff Hendrik C.
Voncken Wilhelmus G.
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
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