Semiconductor device having an antireflective coating

Details Semiconductor device having an antireflective coating Semiconductor device having an antireflective coating

H - Electricity

01

L

345/27

H01L 27/14 (2006.01) H01L 31/0216 (2006.01)

Patent

CA 1045235

ABSTRACT OF THE DISCLOSURE A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semi- conductor crystal and the exterior environment.

236812

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