H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/76 (2006.01) H01L 21/24 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/335 (2006.01) H01L 29/423 (2006.01) H01L 29/47 (2006.01) H01L 29/812 (2006.01) H01L 29/872 (2006.01)
Patent
CA 1305260
83-3-045 CN SEMICONDUCTOR DEVICE ABSTRACT A semiconductor device, specifically an FET, having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi2, disposed therein. The rods form Schottky barriers with the semi- conductor material. A gate contact is made to several of the rods at one end, and source and drain contacts are made to the matrix of semiconductor material. Current flow in the semiconductor material of the matrix between the source and the drain is controlled by applying biasing potential to the gate contact to enlarge the depletion zones around the rods.
552912
Bloss Walter L. III
Cogan Adrian I.
Ditchek Brian M.
Sichel Enid K.
Gte Laboratories Incorporated
R. William Wray & Associates
LandOfFree
Semiconductor device having array of conductive rods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having array of conductive rods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having array of conductive rods will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1224342