Semiconductor device having at least one pn junction and...

Details Semiconductor device having at least one pn junction and... Semiconductor device having at least one pn junction and...

H - Electricity

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H01L 29/34 (2006.01) H01L 21/00 (2006.01) H01L 27/07 (2006.01) H01L 29/00 (2006.01) H01L 29/06 (2006.01) H01L 29/40 (2006.01)

Patent

CA 1037160

ABSTRACT OF THE DISCLOSORE A semiconductor device is disclosed which has a first semicon- ductor layer of one conductivity type and low impurity concentration, a second semiconductor region of the opposite conductivity type forming a PN junction with the first semiconductor layer, a third semiconductor region of the first mentioned conductivity type formed in the first semiconductor layer which surrounds the PN junction and forms an LH junction with the first semiconductor layer, a passivating layer covering at least the PN and LH junctions, and a conductive layer extending on the passivating layer covering at least the inner periphery of the third region and connected to the first semiconductor layer through an electric barrier layer.

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