Semiconductor device having cmos structures

Details Semiconductor device having cmos structures Semiconductor device having cmos structures

H - Electricity

01

L

356/72

H01L 23/34 (2006.01) H01L 27/092 (2006.01) H01L 29/66 (2006.01)

Patent

CA 1205571

Abstract: A CMOS type semiconductor integrated circuit consisting of p-channel MOS transistors and n-channel MOS transistors, is operated at temperatures lower than 100°K. Power and input signals are applied thereto, and output signals are taken out therefrom. The advantages of high speed operation, high density of integration and low power consumption are obtained.

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