Semiconductor device having combined bipolar transistor and...

Details Semiconductor device having combined bipolar transistor and... Semiconductor device having combined bipolar transistor and...

H - Electricity

01

L

356/149

H01L 27/06 (2006.01) H01L 27/07 (2006.01) H01L 29/06 (2006.01) H01L 29/73 (2006.01)

Patent

CA 1232369

- 1 - Abstract: A semiconductor device has a complicated bipolar transistor and a MOSFET structure. In the equivalent circuit of this device, the MOSFET is connected between the base and emitter of the bipolar transistor. The bipolar transistor is a vertical type transistor, and the MOSFET is a lateral type transistor. The MOSFET is formed on a base surface on a side of one main surface on which the emitter of the bipolar transistor is exposed, in such a manner that the MOSFET substantially surrounds the emitter. The result is a device that has a high voltage resistance, a low ON-resistance and high-speed switching characteristics.

490923

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