Semiconductor device having electrode and first level...

Details Semiconductor device having electrode and first level... Semiconductor device having electrode and first level...

H - Electricity

01

L

356/164

H01L 29/02 (2006.01) H01L 21/469 (2006.01)

Patent

CA 1251285

- 1 - Abstract: A semiconductor device includes a semiconductor substrate and a two-layer insulating film formed on the substrate and constituted by upper and lower insulating layers made of insu- lating materials different in chemical properties from each other. An electrode and a first level interconnection are em- bedded in an opening formed in the two-layer insulating film. The invention also relates to a method of forming this device. The distribution of threshold voltage among field effect tran- sistors made in accordance with the present invention is more uniform than among those made by prior art methods.

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