Semiconductor device having high breakdown strength

Details Semiconductor device having high breakdown strength Semiconductor device having high breakdown strength

H - Electricity

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H01L 29/747 (2006.01) H01L 23/58 (2006.01) H01L 23/62 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01) H01L 29/74 (2006.01) H01L 29/87 (2006.01)

Patent

CA 2164339

A distance from the bottom of a mesa groove to an underlying pn junction exceeds the elongation of a depletion layer from the underlying pn junction that occurs when a voltage nearly equal to a target withstand voltage is applied, and a groove width of a section other than a corner of the mesa groove, that is, the groove width of a straight section, is nearly equal to the distance from the bottom of the mesa groove to the underlying pn junction.

Le dispositif à semi-conducteur de l'invention est conçu de manière que la distance depuis le fond d'une rainure mésa jusqu'à la jonction pn sur la face inférieure soit supérieure à l'extension de la couche d'apauvrissement à partir de la jonction pn sur la face inférieure lorsqu'une tension sensiblement égale à la résistance disruptive cible est appliquée. Dans ce cas, la partie autre que les coins de la rainure mésa, c'est-à-dire la largeur de la rainure sur la partie en ligne droite, est sensiblement égale à la distance depuis le fond de la rainure mésa jusqu'à la jonction pn sur la face inférieure.

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