Semiconductor device having tungsten plugs

Details Semiconductor device having tungsten plugs Semiconductor device having tungsten plugs

H - Electricity

01

L

356/140, 356/158

H01L 21/70 (2006.01) H01L 21/3213 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1306551

SEMICONDUCTOR DEVICE HAVING TUNGSTEN PLUGS Abstract A metallization scheme useful for integrated circuits uses a buffer layer (e.g., S) to ensure that the etch back of a contact metal (e.g., 7), such as tungsten, deposited over the buffer layer, can be controlled to form a complete tungsten plug in a via while the tungsten on the dielectric is completely removed. Different etch rates of the buffer and contact materials ensure that, once the buffer layer is exposed, it etches rapidly and the contact material is not significantly etched. - 7 -

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