Semiconductor device including a channel with a...

Details Semiconductor device including a channel with a... Semiconductor device including a channel with a...

H - Electricity

01

L

H01L 29/15 (2006.01)

Patent

CA 2612132

A semiconductor device may include a semiconductor substrate, and at least one metal oxide semiconductor field-effect transistor (MOSFET) thereon. The MOSFET may include spaced-apart source and drain regions, a channel between the source and drain regions, and a gate overlying the channel defining an interface therewith. The gate may include a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric. The channel may include a plurality of stacked base semiconductor monolayers, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers. The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

La présente invention concerne un dispositif à semi-conducteur qui peut comprendre un substrat semi-conducteur et au moins un transistor à effet de champ métal-oxyde semi-conducteur (MOSFET) sur celui-ci. Le MOSFET peut comprendre des régions de source et de drain espacées, un canal entre les régions de source de drain et une grille recouvrant le canal définissant une interface avec celui-ci. La grille peut comprendre un diélectrique de grille recouvrant le canal et une électrode de grille recouvrant le diélectrique de grille. Le canal peut comprendre une pluralité de monocouches semi-conductrices de base empilées et au moins une monocouche non semi-conductrice contrainte dans un réseau cristallin de monocouches semi-conductrices de base adjacentes. La ou les monocouches non semi-conductrices peuvent être positionnées à une profondeur d'environ 4 à 100 monocouches par rapport à l'interface entre le canal et le diélectrique de grille.

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