Semiconductor device including a dopant blocking...

Details Semiconductor device including a dopant blocking... Semiconductor device including a dopant blocking...

H - Electricity

01

L

H01L 29/10 (2006.01) H01L 29/15 (2006.01)

Patent

CA 2650965

A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET). The at least one MOSFET may include a body, a channel layer adjacent the body, and a dopant blocking superlattice between the body and the channel layer. The dopant blocking superlattice may include a plurality of stacked groups of layers. Each group of layers of the dopant blocking superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

La présente invention concerne un dispositif semi-conducteur qui peut comprendre au moins un transistor à effet de champ à oxyde métallique (MOSFET). Le ou les MOSFET peuvent comprendre un corps, une couche de canal adjacente au corps, et un réseau superposé de blocage de dopant entre le corps et la couche de canal. Le réseau superposé de blocage de dopant peut comprendre une pluralité de groupes empilés de couches. Chaque groupe de couches du réseau superposé de blocage de dopant peut comprendre une pluralité de monocouches semi-conductrices de base empilées qui définissent une partie semi-conductrice de base, et au moins une monocouche non semi-conductrice contenue à l'intérieur d'un réseau cristallin de parties semi-conductrices de base adjacentes.

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