H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/15 (2006.01) H01L 29/10 (2006.01) H01L 29/772 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2609585
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least one group of layers of the superlattice may be substantially undoped.
La présente invention se rapporte à un dispositif semi-conducteur, qui possède une hétérostructure comportant une pluralité de groupes empilés de couches. Chaque groupe de l'hétérostructure peut comprendre une pluralité de monocouches semi-conductrices de base empilées, qui définissent une partie semi-conductrice de base, et une couche de modification de bande d'énergie placée sur cette dernière. En outre, la couche de modification de bande d'énergie peut comporter au moins une monocouche non semi-conductrice contenue dans un réseau cristallin de parties semi-conductrices de base adjacentes. Au moins un groupe de couches de l'hétérostructure peut être sensiblement non dopé.
Kreps Scott A.
Mears Robert J.
Mears Technologies Inc.
Teitelbaum & Maclean
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